Title :
Versatility of SEU function and its derivation from the irradiation tests with well-defined white neutron beams
Author :
Yahagi, Yasuo ; Ibe, Eishi ; Yamamoto, Shigehisa ; Yoshino, Yukiaki ; Sato, Masatoshi ; Takahashi, Yasuhiko ; Kameyama, H. ; Saito, Atsushi ; Hidaka, Mitsumori
Author_Institution :
Production Eng. Res. Lab., Hitachi Ltd., Kanagawa, Japan
Abstract :
The soft-error rate estimation method used for monoenergetic and quasimonoenergetic neutron beams is validated by the well-defined white neutron spectra generated at the Los Alamos Neutron Science Center (LANSCE), Los Alamos, NM, including with regard to the single event upset (SEU) threshold energy. Moreover, it is demonstrated that the neutron energy dependence of the SEU cross section is able to derived from neutron irradiation tests for several different white neutron beams by using unfolding technique.
Keywords :
DRAM chips; SRAM chips; neutron beams; neutron effects; DRAM; LANSCE; Los Alamos Neutron Science Center; SEU function; SEU threshold energy; SRAM; monoenergetic neutron beams; neutron energy dependence; neutron irradiation tests; quasimonoenergetic neutron beams; single event upset; soft-error rate estimation method; static random access memory; versatility; white neutron beams; white neutron spectra; Identity-based encryption; Laboratories; Life estimation; Neutrons; Particle beams; SRAM chips; Semiconductor devices; Shape; Single event upset; Testing; DRAM; SEU threshold energy; monoenergetic neutron; quasimonoenergetic neutrons; single event upset (SEU) cross section; static random access memory (SRAM); terrestrial neutron spectrum; unfolding; white neutrons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855820