DocumentCode :
748871
Title :
A charge sensitive preamplifier for high peak stability in spectroscopic measurements at high counting rates
Author :
Fiorini, Carlo
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
Volume :
52
Issue :
5
fYear :
2005
Firstpage :
1603
Lastpage :
1610
Abstract :
In this paper, a charge preamplifier designed to achieve high stability in spectroscopic measurements at different counting rates is presented. The preamplifier operates with the input JFET and the feedback capacitor directly integrated on the silicon detector, in the specific case a Silicon Drift Detector (SDD). The motivation of the work is to overcome the peak shift, typically in the order of few percents and then comparable with the energy resolution achievable at 6 keV with a SDD, which can be measured when the on-chip JFET is operated in the conventionally used source follower configuration. In the proposed circuit, the SDD anode voltage is stabilized by means of a low-frequency feedback loop which operates according to the "drain feedback" technique. Moreover, the implemented design, differently from previous designs also based on a continuous reset of the leakage + signal currents, allows to obtain a sufficiently fixed decay time constant of the preamplifier with respect to event rate variations. This feature allows to maintain an optimal pole-zero compensation by the shaping amplifier when the event rate changes relevantly during the measurement. In an experimental characterization of the preamplifier with a SDD, a Mn-Kalpha peak-shift within ±0.03% (i.e., ±2 eV at 6 keV) has been measured changing the rate from few kcounts/s up to 400 kcounts/s.
Keywords :
X-ray spectroscopy; junction gate field effect transistors; nuclear electronics; position sensitive particle detectors; preamplifiers; silicon radiation detectors; 167 to 500 ns; Mn-Kalpha peak-shift; SDD anode voltage; X-ray spectroscopy; charge preamplifier; drain feedback technique; energy resolution; feedback capacitor; fixed decay time constant; leakage signal currents; low-frequency feedback loop; on-chip JFET; optimal polezero compensation; silicon drift detector; spectroscopic measurements; Capacitors; Charge measurement; Current measurement; Detectors; Feedback loop; Preamplifiers; Signal design; Silicon; Spectroscopy; Stability; Charge preamplifier; X-ray spectroscopy; silicon drift detector;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.856733
Filename :
1546471
Link To Document :
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