Title :
Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications
Author :
Dowd, P. ; Johnson, S.R. ; Feld, S.A. ; Adamcyk, M. ; Chaparro, S.A. ; Joseph, J. ; Hilgers, K. ; Horning, M.P. ; Shiralagi, K. ; Zhang, Y.-H.
Author_Institution :
Lytek Corp., Phoenix, AZ, USA
fDate :
6/26/2003 12:00:00 AM
Abstract :
Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10°C and 0.1 mW at 70°C and sidemode suppression ratios up to 42 dB are also achieved.
Keywords :
III-V semiconductors; gallium arsenide; optical transmitters; semiconductor lasers; surface emitting lasers; 0.1 mW; 0.3 mW; 1.2 mW; 10 degC; 1266 nm; 70 degC; GaAsP-GaAs-GaAsSb; GaAsP/GaAs/GaAsSb; communications applications; continuous-wave operation; long wavelength VCSELs; power output; sidemode suppression ratios; singlemode powers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030664
