Title :
108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology
Author :
Kappeler, O. ; Leuther, A. ; Benz, W. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
6/26/2003 12:00:00 AM
Abstract :
Based on a 100 nm metamorphic HEMT process with 220 GHz transit frequency, fT, an optimised dynamic 2:1 frequency divider has been designed. The implemented symmetrical design and optimised three-metal interconnect technology with a BCB dielectric layer result in a very small core size which leads to a maximum operation frequency of 108 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; circuit optimisation; field effect MIMIC; frequency dividers; gallium arsenide; integrated circuit interconnections; millimetre wave frequency convertors; 100 nm; 100 nm metamorphic enhancement HEMT technology; 108 GHz; 108 GHz dynamic frequency divider; 1400 mS/mm; 220 GHz; BCB dielectric layer; GaAs; high transconductance; maximum operation frequency; optimised dynamic 2:1 frequency divider; optimised three-metal interconnect technology; semi-insulating GaAs substrates; small core size; source coupled FET logic; symmetrical design; transit frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030633
