Title :
Anomalous temperature-dependent characteristics of silicon diffused resistors
Author :
Chuang, Hung-Ming ; Tsai, Sheng-Fu ; Thei, Kong-Beng ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
6/26/2003 12:00:00 AM
Abstract :
The temperature-dependent characteristics of silicon diffused resistors are demonstrated and studied. Based on the presence of a silicide/silicon junction, the device size plays an important role on diffused resistor behaviours. From experimental and theoretical analysis, some important parameters, e.g. the interface resistance (Rinterface), sheet resistance (Rbulk), deviations of resistor length (ΔL) and width (ΔW ) are obtained. Also, anomalous phenomena of temperature coefficient of resistance (TCR) are found.
Keywords :
CMOS integrated circuits; electrostatic discharge; isolation technology; resistors; CMOS; ESD protection circuits; anomalous temperature-dependent characteristics; device size; diffused resistors; interface resistance; resistor length; resistor width; sheet resistance; temperature coefficient of resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030659