• DocumentCode
    749087
  • Title

    InGaP/InGaAs double delta-doped channel transistor

  • Author

    Chuang, Hung-Ming ; Cheng, Shiou-Ying ; Liao, Xin-Da ; Chen, Chun-Yuan ; Liu, Wen-Chau

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
  • Volume
    39
  • Issue
    13
  • fYear
    2003
  • fDate
    6/26/2003 12:00:00 AM
  • Firstpage
    1016
  • Lastpage
    1018
  • Abstract
    A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.
  • Keywords
    III-V semiconductors; doping profiles; gallium arsenide; indium compounds; leakage currents; microwave field effect transistors; DC performances; HFET; InGaP-InGaAs; InGaP/InGaAs; RF performances; double delta-doped channel transistor; gate leakage current; microwave characteristics; operating temperature regime; turn-on voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030660
  • Filename
    1214814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=749087