DocumentCode
749203
Title
Charge collection inefficiencies induced by intense 12C bombardment of SSB detectors
Author
Aguilera, E.F. ; Rosales, Pedro ; Ramírez-Jiménez, F.J.
Author_Institution
Dept. del Acelerador, Inst. Nacional de Investigaciones Nucl., Mexico
Volume
52
Issue
5
fYear
2005
Firstpage
1785
Lastpage
1791
Abstract
Experimental data are presented showing that, for a light heavy ion such as Carbon, large collection-efficiency losses appear in Silicon Surface Barrier detectors for large enough ion fluences. This effect, apparently related to the onset of radiation damage of the detector, shows an S-shape behavior with the fluence above threshold.
Keywords
Rutherford backscattering; carbon; ion beam effects; silicon radiation detectors; Rutherford backscattering; S-shape behavior; SSB detectors; Silicon Surface Barrier detectors; carbon; charge collection inefficiencies; intense 12C bombardment; ion fluences; light heavy ion; pulse height defect; radiation damage; Amplitude modulation; Backscatter; Large Hadron Collider; Linearity; Radiation detectors; Radiative recombination; Radiofrequency interference; Semiconductor radiation detectors; Silicon radiation detectors; Spontaneous emission; Ion fluence; Rutherford backscattering; pulse height defect; silicon detector;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2005.856754
Filename
1546502
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