• DocumentCode
    749203
  • Title

    Charge collection inefficiencies induced by intense 12C bombardment of SSB detectors

  • Author

    Aguilera, E.F. ; Rosales, Pedro ; Ramírez-Jiménez, F.J.

  • Author_Institution
    Dept. del Acelerador, Inst. Nacional de Investigaciones Nucl., Mexico
  • Volume
    52
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1785
  • Lastpage
    1791
  • Abstract
    Experimental data are presented showing that, for a light heavy ion such as Carbon, large collection-efficiency losses appear in Silicon Surface Barrier detectors for large enough ion fluences. This effect, apparently related to the onset of radiation damage of the detector, shows an S-shape behavior with the fluence above threshold.
  • Keywords
    Rutherford backscattering; carbon; ion beam effects; silicon radiation detectors; Rutherford backscattering; S-shape behavior; SSB detectors; Silicon Surface Barrier detectors; carbon; charge collection inefficiencies; intense 12C bombardment; ion fluences; light heavy ion; pulse height defect; radiation damage; Amplitude modulation; Backscatter; Large Hadron Collider; Linearity; Radiation detectors; Radiative recombination; Radiofrequency interference; Semiconductor radiation detectors; Silicon radiation detectors; Spontaneous emission; Ion fluence; Rutherford backscattering; pulse height defect; silicon detector;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.856754
  • Filename
    1546502