• DocumentCode
    749312
  • Title

    Relaxation-based transient sensitivity computations for MOSFET circuits

  • Author

    Chen, Chun-Jung ; Feng, Wu-Shiung

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    14
  • Issue
    2
  • fYear
    1995
  • fDate
    2/1/1995 12:00:00 AM
  • Firstpage
    173
  • Lastpage
    185
  • Abstract
    In this paper, we propose two new methods for computing the transient sensitivities of large scale MOSFET circuits, which exploit the relaxation-based circuit simulation techniques, the waveform relaxation (WR) method and the iterated timing analysis (ITA) method. Sufficient conditions are stated and proven, which are quite mild for MOSFET circuits, for convergence of these new methods. A pruning scheme, which prunes the sensitivity circuits, takes the positions of the design parameters as well as the outputs of interest into account and saves any redundant subcircuit computation even though that subcircuit may not be latent. By modifying the original WR and ITA algorithms, we also present practical computational algorithms which can process multiple design parameters. These practical algorithms retain most of the structures of the original algorithms, which can easily be implemented into available relaxation-based circuit simulators. These new methods have been implemented and the experimental results for several circuits are shown to demonstrate their effectiveness
  • Keywords
    MOS integrated circuits; circuit CAD; circuit analysis computing; digital simulation; integrated circuit design; iterative methods; relaxation theory; sensitivity analysis; transient analysis; MOSFET circuits; circuit simulation techniques; computational algorithms; convergence; design parameters; iterated timing analysis; multiple design parameters; pruning scheme; relaxation-based transient sensitivity computations; waveform relaxation; Algorithm design and analysis; Circuit analysis computing; Circuit simulation; Convergence; Large-scale systems; MOSFET circuits; Process design; Sufficient conditions; Timing; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.370426
  • Filename
    370426