Title :
3.3 W CW diffraction limited broad area semiconductor amplifier
Author :
Goldberg, L. ; Mehuys, D. ; Hall, D.C.
Author_Institution :
US Naval Res. Labs., Washington, DC, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
A 600 mu m wide GaAlAs travelling wave amplifier operating at 860 nm generated 3.3 W under CW saturated operation. The far field emission pattern was diffraction limited with a 0.08 degrees angular width.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 3.3 W; 600 micron; 860 nm; CW diffraction limited broad area semiconductor amplifier; CW saturated operation; GaAlAs travelling wave amplifier; far field emission pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920684
