Title :
OEICs for WDM transceiver modules fabricated by reactive ion etching on semi-insulating substrates
Author :
Williams, P.J. ; Wood, A.K. ; Ogden, R. ; Carter, A.C.
fDate :
6/4/1992 12:00:00 AM
Abstract :
The design and fabrication of OEICs on semi-insulating InP substrates comprising 1300 nm DFB lasers, 1300/1530 nm wavelength duplexers and monitor photodiodes is described. OEIC lasing thresholds were as low as 20 mA. The through-state crosstalk for the integrated duplexer was typically -12 dB. Linear tracking of the laser output by the monitor photodiode was achieved with sensitivities in the region of 70 mu A/mW. The OEICs operated successfully in a 622 Mbit/s bidirectional optical link.
Keywords :
distributed feedback lasers; frequency division multiplexing; integrated optoelectronics; modules; multiplexing equipment; optical communication equipment; optical links; photodiodes; semiconductor junction lasers; sputter etching; transceivers; 1300 nm; 20 mA; 622 Mbit/s; DFB lasers; InP; OEIC lasing thresholds; OEICs; WDM transceiver modules; bidirectional optical link; linear tracking; monitor photodiodes; reactive ion etching; semi-insulating substrates; through-state crosstalk; wavelength duplexers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920685
