DocumentCode
749492
Title
Electro-optic properties of InGaAs/GaAs multiquantum wells for modulator applications
Author
Chin, M.K. ; Niki, Shigeru ; Wieder, H.H. ; Chang, William S. C.
Author_Institution
California Univ., San Diego, La Jolla, CA, USA
Volume
28
Issue
12
fYear
1992
fDate
6/4/1992 12:00:00 AM
Firstpage
1085
Lastpage
1087
Abstract
A study of the application of InGaAs/GaAs multiquantum wells for modulators using the electroabsorption ( Delta alpha ) and the electrofraction ( Delta n) effects is presented. The important parameters for these devices were measured directly in both waveguide and surface-normal configurations. The Delta n and Delta alpha spectra were shown to satisfy the Kramers-Kronig relations.
Keywords
III-V semiconductors; Kramers-Kronig relations; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; refractive index; semiconductor quantum wells; InGaAs-GaAs; Kramers-Kronig relations; electroabsorption; electrofraction; modulators; multiquantum wells; surface-normal configurations; waveguide configuration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920686
Filename
141132
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