Title :
Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Source/Drain Regions Doped by Implanted Arsenic
Author :
Chen, Rongsheng ; Zhou, Wei ; Zhang, Meng ; Wong, Man ; Kwok, Hoi Sing
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm2/V·s, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 ×107.
Keywords :
field effect transistors; gallium compounds; hydrogen; indium compounds; semiconductor doping; thermal stability; thin film transistors; zinc compounds; InGaZnO; argon plasma; doping; electrical performance; field-effect mobility; hydrogen; implanted arsenic; self-aligned indium-gallium-zinc oxide thin-film transistor; source-drain region; thermal stability; voltage 3.5 V; Argon; Hydrogen; Logic gates; Plasmas; Thermal stability; Thin film transistors; Amorphous indium–gallium–zinc oxide (a-IGZO); arsenic; self-aligned; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2223192
