DocumentCode :
749612
Title :
A complete model of E2PROM memory cells for circuit simulations
Author :
Pavan, Paolo ; Larcher, Luca ; Cuozzo, Massimiliano ; Zuliani, Paola ; Conte, Antonino
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Universita di Modena e Reggio Emilia, Italy
Volume :
22
Issue :
8
fYear :
2003
Firstpage :
1072
Lastpage :
1079
Abstract :
E2PROM memory devices are widely used in embedded applications. For an efficient design flow, a correct modeling of these memory cells in every operation condition becomes more and more important, especially due to power consumption limitations. Although E2PROM cells have being used for a long time, very few compact models have been developed. Here, we present a complete compact model based on an original procedure to calculate the floating gate potential in DC conditions, without the need of any capacitive coupling coefficient. This model is designed as a modular structure, so to simplify program/erase and reliability simulations. Program/erase and leakage currents are included by means of simple voltage-controlled current sources implementing their analytical expression. It can be used to simulate memory cells both during read operation (DC conditions) and during program and erase (transient conditions) giving always very accurate results. We show also that, provided there are good descriptions of degradation mechanisms, the same model can be used also for reliability simulations, predicting charge loss due to tunnel oxide degradation.
Keywords :
CMOS memory circuits; EPROM; circuit simulation; embedded systems; integrated circuit modelling; integrated circuit reliability; leakage currents; transient analysis; DC conditions; E2PROM memory cells; EEPROM memory devices; VCCS; charge loss; circuit simulations; compact model; computer aided design; degradation mechanisms; embedded applications; floating gate potential; leakage currents; modular structure; power consumption limitations; program/erase simulations; read operation; reliability simulations; semiconductor memories; transient conditions; tunnel oxide degradation; voltage-controlled current sources; Circuit simulation; Computational modeling; Degradation; Integrated circuit modeling; Integrated circuit technology; MOSFETs; Nonvolatile memory; PROM; Predictive models; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2003.814952
Filename :
1214865
Link To Document :
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