Title :
A Si/CdTe semiconductor Compton camera
Author :
Watanabe, Shin ; Tanaka, Takaaki ; Nakazawa, Kazuhiro ; Mitani, Takefumi ; Oonuki, Kousuke ; Takahashi, Tadayuki ; Takashima, Takeshi ; Tajima, Hiroyasu ; Fukazawa, Yasushi ; Nomachi, Masaharu ; Kubo, Shin ; Onishi, Mitsunobu ; Kuroda, Yoshikatsu
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Kanagawa, Japan
Abstract :
We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively.
Keywords :
gamma-ray detection; gamma-ray spectroscopy; image reconstruction; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; CdTe pixel detectors; CdTe semiconductor Compton camera; Compton image reconstruction; Si semiconductor Compton camera; VA32TAs; double-sided Si strip detectors; gamma-ray astronomy detectors; gamma-ray spectral lines; gamma-ray spectroscopy detectors; high energy resolution; noise analog ASICs; prototype; read out; semiconductor imaging devices; Cameras; Decision support systems; Electromagnetic scattering; Energy resolution; Gamma ray detection; Gamma ray detectors; Particle scattering; Prototypes; Silicon radiation detectors; Strips; CdTe; Compton camera; gamma-ray astronomy detectors; gamma-ray spectroscopy detectors; silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.856995
