• DocumentCode
    749799
  • Title

    Influence of crystalline surface quality on TlBr radiation detector performance

  • Author

    Oliveira, Icimone B. ; Costa, Fabio E. ; Kiyohara, Pedro K. ; Hamada, Margarida M.

  • Author_Institution
    IPEN/CNEN-SP, Sao Paulo, Brazil
  • Volume
    52
  • Issue
    5
  • fYear
    2005
  • Firstpage
    2058
  • Lastpage
    2062
  • Abstract
    In this study, TlBr detectors were fabricated from crystals purified by the multipass zone refining and grown by the Bridgman method. Detectors were prepared using TlBr 0.3-mm-thick wafers, with surface submitted to different mechanical and chemical treatments. Optical microscopy and scanning electron microscopy evaluated the TlBr wafers surface quality. To analyze the surface quality influence in the detector response, systematic measurements of the pulse height spectra and energy resolution were carried out for each prepared radiation detector. The radiation response for these detectors was performed under 241Am gamma radiation excitation at room temperature. The influence of the surface quality of the TlBr wafer on its performance as a radiation detector was observed.
  • Keywords
    crystal growth from melt; optical microscopy; scanning electron microscopy; semiconductor counters; surface treatment; zone refining; 241Am gamma radiation excitation; Bridgman method; TlBr radiation detector performance; TlBr wafers surface quality; chemical treatments; crystalline surface quality; crystals purification; energy resolution; mechanical treatments; multipass zone refining; optical microscopy; pulse height spectra; scanning electron microscopy; Chemicals; Crystallization; Electron optics; Energy measurement; Optical microscopy; Pulse measurements; Radiation detectors; Refining; Scanning electron microscopy; Surface treatment; Optical microscopy; radiation detector; scanning electron microscopy; surface quality; thallium bromide;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.856788
  • Filename
    1546553