DocumentCode :
750030
Title :
Fundamental study of an electrostatic chuck for silicon wafer handling
Author :
Asano, Kazutoshi ; Hatakeyama, Fumikazu ; Yatsuzuka, Kyoko
Author_Institution :
Dept. of Electr. & Inf. Eng., Yamagata Univ., Yonezawa, Japan
Volume :
38
Issue :
3
fYear :
2002
Firstpage :
840
Lastpage :
845
Abstract :
Mechanical holding systems of a wafer might cause serious problems in the semiconductor industry. Electrostatic wafer handling might be one of the possible solutions for such problems. The authors have investigated an attractive force on a silicon wafer by using an electrostatic chuck which consists of interdigitated electrodes and a dielectric thin film. Electrostatic attractive force increases as the applied voltage increases, and with a thinner dielectric layer. With the narrower width and spacing of interdigitated electrodes, the stronger electrostatic force is obtained. When 1-mm width and spacing interdigitated electrodes and 50-μm-thick polymer film are used, the strongest force obtained was about 17 N in the vertical direction at 3.5 kV, for a 4-in silicon wafer. When DC high voltage is used, some residual force remains, even after the applied voltage is removed. This was overcome by using variable-frequency AC high voltage
Keywords :
electrodes; electronics industry; electrostatic devices; materials handling; 1 mm; 3.5 kV; 4 in; 50 micron; Si; attractive force; dielectric layer; dielectric thin film; electrostatic chuck; electrostatic wafer handling; interdigitated electrodes; mechanical wafer holding systems; polymer film; semiconductor industry; Contamination; Dielectric thin films; Electrodes; Electronics industry; Electrostatics; Industry Applications Society; Power engineering and energy; Silicon; Vacuum systems; Voltage;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2002.1003438
Filename :
1003438
Link To Document :
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