Title :
Characterization and modeling of high-voltage field-stop IGBTs
Author :
Kang, Xiaosong ; Caiafa, Antonio ; Santi, Enrico ; Hudgins, Jerry L. ; Palmer, Patrick R.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
The high-voltage field-stop (FS) insulated gate bipolar transistor (IGBT) is a promising power device for high-power applications thanks to the robust characteristics offered by the FS technology, which combines the inherent advantages offered by punch-through and nonpunch-through structures while overcoming the drawbacks of each structure. In this paper, an electrothermal physics-based model for the FS IGBT is developed. The model contains a detailed description of the FS layer and it is validated using experimental results for a commercial 1200-V/60-A FS IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5-kV FS IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.
Keywords :
insulated gate bipolar transistors; semiconductor device models; 1200 V; 6.5 kV; 60 A; IGBT; data sheets; electrothermal physics-based model; high-voltage field-stop IGBT; insulated gate bipolar transistor; nonpunch-through structures; punch-through structures; robust characteristics; Associate members; Charge carrier processes; Electrothermal effects; Industry Applications Society; Insulated gate bipolar transistors; Radiative recombination; Robustness; Spontaneous emission; Temperature distribution; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2003.814547
