• DocumentCode
    750378
  • Title

    Base-emitter diffusion capacitance in GaAlAs/GaAs HBTs

  • Author

    Kramer, Brad A. ; Weber, Robert J.

  • Author_Institution
    Iowa State Univ., Ames, IA, USA
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1106
  • Lastpage
    1107
  • Abstract
    The voltage dependence of the base-emitter diffusion capacitance in a single heterojunction GaAlAs/GaAs HBT is discussed. It is found that conventional transistor capacitance models are not accurate for these devices. An empirical expression is given which may be used to model this diffusion capacitance.
  • Keywords
    III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAlAs-GaAs; base-emitter diffusion capacitance; model; single heterojunction HBT; voltage dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920698
  • Filename
    141144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750378