Title :
Base-emitter diffusion capacitance in GaAlAs/GaAs HBTs
Author :
Kramer, Brad A. ; Weber, Robert J.
Author_Institution :
Iowa State Univ., Ames, IA, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
The voltage dependence of the base-emitter diffusion capacitance in a single heterojunction GaAlAs/GaAs HBT is discussed. It is found that conventional transistor capacitance models are not accurate for these devices. An empirical expression is given which may be used to model this diffusion capacitance.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAlAs-GaAs; base-emitter diffusion capacitance; model; single heterojunction HBT; voltage dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920698
