Title :
Facet heating in AlGaInP 670 nm double-heterojunction lasers
Author :
Tang, W.C. ; Rosen, H.J. ; Payne, R.N.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
Raman microprobe studies of AlGaInP 670 nm lasers show a higher facet temperature rise per unit output power than that observed in AlGaAs lasers. This heating appears to be localised in the lasing region of the laser facet. These results are supported by probe beam facet heating experiments which show substantial differences between the AlGaInP and AlGaAs lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 670 nm; AlGaInP; Raman microprobe studies; double-heterojunction; laser facet; probe beam facet heating; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920712
