DocumentCode :
750611
Title :
22 GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure
Author :
Kato, Kazuhiko ; Hata, Satoshi ; Kozen, A. ; Oku, S. ; Matsumoto, Shinichi ; Yoshida, J.
Author_Institution :
NTT Opto-electron. Labs., Kanagawa, Japan
Volume :
28
Issue :
12
fYear :
1992
fDate :
6/4/1992 12:00:00 AM
Firstpage :
1140
Lastpage :
1142
Abstract :
A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiO2 sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode p-n junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
Keywords :
integrated optics; integrated optoelectronics; optical waveguides; photodiodes; 22 GHz; InP; SiO 2 sidewall film; butt-joint structure; input waveguide; monolithic integration; optical waveguide; p-n junction; photodiode; semiinsulating semiconductor; ultrahighspeed;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920719
Filename :
141165
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=750611
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