DocumentCode
750719
Title
Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 mu m
Author
Ohkubo, Masataka ; Ijichi, T. ; Iketani, A. ; Kikuta, T.
Author_Institution
Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
28
Issue
12
fYear
1992
fDate
6/4/1992 12:00:00 AM
Firstpage
1149
Lastpage
1150
Abstract
Using InGaAsP lattice matched to GaAs, InGaAs/GaAs/InGaAsP/InGaP 0.98 mu m GRINSCH SL-SQW lasers were fabricated for the first time. A high characteristic temperature of 215 K was measured at 10-70 degrees C. A CW light output power of over 300 mW was achieved on 3 mu m-wide ridge waveguide lasers with current-blocked regions near cavity facets.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 0.98 micron; 10 to 70 degC; 215 K; 3 micron; CW light output power; GRINSCH SL-SQW lasers; III-V semiconductors; InGaAs-GaAs-InGaAsP-InGaP; cavity facets; characteristic temperature; current-blocked regions; ridge waveguide lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920725
Filename
141171
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