Title :
High-Performance GaN-Based Vertical-Injection Light-Emitting Diodes With TiO2–SiO 2 Omnidirectional Reflector and n-GaN Roughness
Author :
Huang, H.W. ; Kuo, H.C. ; Lai, C.F. ; Lee, C.E. ; Chiu, C.W. ; Lu, T.C. ; Wang, S.C. ; Lin, C.H. ; Leung, K.M.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
4/15/2007 12:00:00 AM
Abstract :
We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2-SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm times 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2-SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace
Keywords :
III-V semiconductors; etching; gallium compounds; integrated optoelectronics; light emitting diodes; mirrors; photoelectrochemistry; silicon compounds; surface roughness; thin film devices; titanium compounds; 1 mm; 330 mW; 350 mA; 455 nm; GaN; GaN-based LED; TiO2-SiO2; TiO2-SiO2 reflector; high-performance LED; laser lift-off technology; light-emitting diodes; n-GaN roughness; omnidirectional reflector; patterned conducting channels; photoelectrochemical etching; thin-film LED; vertical current spreading; vertical injection LED; Bonding; Dielectrics; Distributed Bragg reflectors; Light emitting diodes; Liquid crystal displays; Mirrors; Optical polarization; Periodic structures; Substrates; Transistors; Flip-chip; light-emitting diode (LED); omnidirectional reflector (ODR);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.893829
