Title :
GaN Surface-Emitting Laser With Monolithic Cavity-Folding Mirrors
Author :
Lee, Jae-Soong ; Lee, Joonhee ; Jeon, Heonsu
Author_Institution :
Dept. of Phys. & Astron., Seoul Nat. Univ.
fDate :
4/15/2007 12:00:00 AM
Abstract :
We report on the demonstration of a GaN-based surface-emitting laser (SEL) in a folded-cavity (FC) scheme. Two 45deg-angled sidewall deflectors were monolithically integrated at both the edges of an otherwise conventional InGaN multiple-quantum-well edge-emitting laser structure. Despite a low effective mirror reflectivity of R(<1%), the optically pumped broad-area laser structure produced laser oscillation in the vertical direction with a low threshold pump intensity of ~350kW/cm2. Computer simulations on the FC, which was based on the finite-difference time-domain method, not only quantified the cavity quality of our FC-SEL device but also suggested methods to lower the laser threshold
Keywords :
finite difference time-domain analysis; gallium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; laser mirrors; monolithic integrated circuits; optical pumping; quantum well lasers; surface emitting lasers; GaN; GaN laser; InGaN multiple-quantum-well laser; broad-area laser structure; edge-emitting laser; finite-difference time-domain method; folded-cavity scheme; laser cavity quality; laser oscillation; mirror reflectivity; monolithic cavity-folding mirrors; monolithic integration; optical pumping; sidewall deflectors; surface-emitting laser; Computer simulation; Gallium nitride; Laser excitation; Mirrors; Optical pumping; Pump lasers; Quantum well devices; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers; GaN; integrated optics; laser diodes; light deflectors; surface emission; total internal reflection (TIR);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.894103
