• DocumentCode
    750826
  • Title

    InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE

  • Author

    Ren, Fengyuan ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, Patrick W. ; Esagui, R.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1150
  • Lastpage
    1152
  • Abstract
    Carbon-doped based InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported. Large area devices (emitter diameter 70 mu m) exhibited gain of 25 for high injection levels at a base doping of 5*1019 cm-3. Ideality factors (<1.1) were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double (DHBT) heterojunction devices. Vceos of 12 and 19 V for SHBTs and DHBTs, respectively, were measured.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; 12 V; 19 V; DHBT; InGaP-GaAs; MOMBE; SHBT; base-collector junctions; emitter diameter; emitter-base junctions; gas-source metal organic molecular beam epitaxy; heterojunction bipolar transistors; injection levels;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920726
  • Filename
    141172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750826