DocumentCode :
750960
Title :
Designing transistor operating points within a specified ΔIc due to changes in β and VBE
Volume :
20
Issue :
2
fYear :
1977
fDate :
5/1/1977 12:00:00 AM
Firstpage :
118
Lastpage :
119
Abstract :
A sound pedagogical method for designing stable operating points for bipolar transistors that have a range of β and VBE is presented. The method outlines a procedure for designing an amplifier to within a specified ΔIC where β and VBE have variations due to a spread in parameters during fabrication and/or due to temperature changes. A design example, with experimental verification, is presented.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Design methodology; Electronic circuits; Equations; FETs; Fabrication; Resistors; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Education, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9359
Type :
jour
DOI :
10.1109/TE.1977.4321131
Filename :
4321131
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=750960
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