High-voltage (3 kV) UMOSFETs in 4H-SiC

Author

Li, Y. ; Cooper, J.A., Jr. ; Capano, M.A.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

972

Lastpage

975

Abstract

Vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) in 4H-SiC having both trench oxide protection and junction termination extension (JTE) are reported for the first time. Devices are fabricated with and without counter-doped channels. Blocking voltages and specific on-resistances are 3360 V and 199 mΩ-cm² for doped-channel FETs and 3055 V and 121 mΩ-cm² for FETs without doped channels. These blocking voltages are the highest reported to date for UMOSFETs in SiC

Keywords

isolation technology; leakage currents; power MOSFET; silicon compounds; sputter etching; wide band gap semiconductors; 3 kV; SiC; UMOSFET; blocking voltages; counter-doped channels; ionization coefficients; junction termination extension; on-state characteristics; reactive ion etching; reverse leakage current density; specific on-resistances; trench oxide protection; vertical trench-gate MOSFET; FETs; Implants; MOSFET circuits; Power MOSFET; Protection; Silicon carbide; Temperature; Termination of employment; Voltage; Wideband;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003714

Filename

1003714