Photodetectors monolithically integrated on SOI substrate for optical pickup using blue or near-infrared semiconductor laser

Author

Kimura, Shigeharu ; Maio, Kenji ; Doi, Takeshi ; Shimano, Takeshi ; Maeda, Takeshi

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

997

Lastpage

1004

Abstract

We made photodetectors on a silicon-on-insulator (SOI) substrate by a 0.35-μm BiCMOS fabrication process to detect the signal light used in an optical disk system. Investigating their characteristics at two wavelengths, 410 and 780 nm, for different structures, we found that the thickness of the silicon crystalline layer on the insulator strongly affected the frequency response at the longer wavelength, while the cutoff frequency was over 500 MHz for the shorter wavelength. We also simulated the frequency response

Keywords

frequency response; laser beam applications; optical disc storage; photodetectors; silicon-on-insulator; 0.35 micron; 410 nm; 500 MHz; 780 nm; BiCMOS fabrication process; SOI substrate; Si; cutoff frequency; frequency response; near-infrared semiconductor laser; optical disk system; optical pickup; photodetectors; BiCMOS integrated circuits; Crystallization; Cutoff frequency; Frequency response; Insulation; Optical device fabrication; Photodetectors; Signal detection; Signal processing; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003719

Filename

1003719