Title :
High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure
Author :
Aoki, Masaki ; Suzuki, M. ; Takahashi, Masaharu ; Sano, Hiroyasu ; Ido, T. ; Kawano, T. ; Takai, Asuka
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/4/1992 12:00:00 AM
Abstract :
An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5.4 mA and a modulation efficiency as high as 13 dB/2 V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1.55 mu m.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical modulation; semiconductor junction lasers; semiconductor quantum wells; 1 V; 1.55 micron; 10 Gbit/s; 5.4 mA; InGaAs-InGaAsP; MQW electroabsorption-modulator integrated DFB laser; in-plane bandgap energy control technique; low-capacitance semi-insulating BH process; modulation efficiency; modulation voltage; semi-insulating buried heterostructure; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920730
