DocumentCode :
751300
Title :
Optimization and realization of sub-100-nm channel length single halo p-MOSFETs
Author :
Borse, D.G. ; Rani KN, M. ; Jha, Neeraj K. ; Chandorkar, A.N. ; Vasi, J. ; Rao, V. Ramgopal ; Cheng, B. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Volume :
49
Issue :
6
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
1077
Lastpage :
1079
Abstract :
Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle VT adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes
Keywords :
MOSFET; hot carriers; ion implantation; semiconductor device reliability; semiconductor doping; asymmetric channel; charge-pumping; halo doping; hot carrier reliability; implant parameters; large angle threshold voltage; optimization; output characteristics; single halo p-MOSFET; small channel lengths; tilt angle; Charge pumps; Doping profiles; Gate leakage; Hot carriers; Implants; Length measurement; Los Angeles Council; MOSFET circuits; Silicidation; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.1003752
Filename :
1003752
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=751300
بازگشت