A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

Author

Chen, Qiang ; Agrawal, Bhavna ; Meindl, J.D.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

49

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1086

Lastpage

1090

Abstract

A general analytical subthreshold swing (S) model for symmetric DG MOSFETs is derived using evanescent-mode analysis. Through a concept of effective conducting path, it explains a unique doping concentration (N _A) dependence of S, providing a unified understanding of previous S models and leading to a new improved S model for undoped DG MOSFETs. Compact, explicit expressions of a scale length are derived, which expedite projections of scalability of DG MOSFETs and its requirement

Keywords

MOSFET; Poisson equation; semiconductor device models; semiconductor doping; Medici simulations; analytical subthreshold swing model; doping concentration dependence; double-gate MOSFET; effective conducting path; eigenvalues; evanescent-mode analysis; scalability projections; scale length; two-dimensional Poisson equation; Analytical models; Doping; MOSFETs; Numerical simulation; Permittivity; Poisson equations; Scalability; Semiconductor device modeling; Semiconductor process modeling; Subthreshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1003757

Filename

1003757