DocumentCode :
751393
Title :
The Haynes-Shockley Experiment with Silicon Planar Structures
Author :
Middelhoek, S. ; Geerts, M.J.
Volume :
21
Issue :
1
fYear :
1978
Firstpage :
31
Lastpage :
35
Abstract :
A Haynes-Shockley experiment is described which is performed on silicon planar structures instead of on the usual germanium filaments. The drift field is realized by planar ohmic contacts, which are properly positioned to ensure a homogeneous field in the measuring area. The structures have been thoroughly tested, and the measurements yield the expected minority carrier drift mobility and lifetime. The silicon structures relieve the student of the laborious preparation of the normally used germanium filaments.
Keywords :
Area measurement; Germanium; Integrated circuit technology; Laboratories; Life testing; Ohmic contacts; Physics; Position measurement; Semiconductor devices; Silicon;
fLanguage :
English
Journal_Title :
Education, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9359
Type :
jour
DOI :
10.1109/TE.1978.4321182
Filename :
4321182
Link To Document :
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