Title :
Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications
Author :
Brassard, D. ; Ouellet, L. ; El Khakani, M.A.
Author_Institution :
Inst. Nat. de la Recherche Scientifique, Varennes, Que.
fDate :
4/1/2007 12:00:00 AM
Abstract :
High-k titanium silicate (i.e., TiSiO4) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO4-based capacitors can exhibit a capacitance density as high as 30 fF/mum2 while maintaining low dielectric dispersion and losses. An excellent voltage linearity was also obtained ( alpha~600 ppm/V2 at 8.2 fF/mum2) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm2 at 1 MV/cm. Our results thus show that TiSiO4 films constitute a very promising approach for the achievement of high performance MIM capacitors
Keywords :
MIM devices; capacitors; sputter deposition; thin film devices; titanium compounds; MIM capacitor applications; TiSiO4; capacitance density; low dielectric dispersion; metal-insulator-metal capacitors; room-temperature deposited titanium silicate thin films; sputter deposition process; voltage linearity; Capacitance; Dielectric losses; High K dielectric materials; High-K gate dielectrics; Linearity; MIM capacitors; Metal-insulator structures; Sputtering; Titanium; Voltage; Capacitors; high-$k$; metal–insulator–metal (MIM); sputtering; titanium silicate ($hbox{TiSiO}_{4}$); voltage coefficient of capacitance $(alpha)$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891754
