Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications

Author

Brassard, D. ; Ouellet, L. ; El Khakani, M.A.

Author_Institution

Inst. Nat. de la Recherche Scientifique, Varennes, Que.

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

261

Lastpage

263

Abstract

High-k titanium silicate (i.e., TiSiO₄) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO₄-based capacitors can exhibit a capacitance density as high as 30 fF/mum² while maintaining low dielectric dispersion and losses. An excellent voltage linearity was also obtained ( alpha~600 ppm/V² at 8.2 fF/mum²) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm² at 1 MV/cm. Our results thus show that TiSiO₄ films constitute a very promising approach for the achievement of high performance MIM capacitors

Keywords

MIM devices; capacitors; sputter deposition; thin film devices; titanium compounds; MIM capacitor applications; TiSiO₄; capacitance density; low dielectric dispersion; metal-insulator-metal capacitors; room-temperature deposited titanium silicate thin films; sputter deposition process; voltage linearity; Capacitance; Dielectric losses; High K dielectric materials; High-K gate dielectrics; Linearity; MIM capacitors; Metal-insulator structures; Sputtering; Titanium; Voltage; Capacitors; high-$k$; metal–insulator–metal (MIM); sputtering; titanium silicate ($hbox{TiSiO}_{4}$); voltage coefficient of capacitance $(alpha)$;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891754

Filename

4137628