Title :
On the Use of a SiGe Spike in the Emitter to Improve the fTxBVCEO Product of High-Speed SiGe HBTs
Author :
Choi, L.J. ; Van Huylenbroeck, S. ; Piontek, A. ; Sibaja-Hernandez, A. ; Kunnen, E. ; Meunier-Beillard, P. ; van Noort, W.D. ; Hijzen, E. ; Decoutere, S.
Author_Institution :
Interuniversity Micro-Electron. Center, Leuven
fDate :
4/1/2007 12:00:00 AM
Abstract :
Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (fT), but these HBTs often suffer from too high current gains. This leads to low values for the open-base breakdown voltage (BVCEO). In this letter we demonstrate the use of a SiGe spike in the emitter as a practical method to increase the base current. Hence, the breakdown voltage is increased. At the same time, the device RF performance is not affected, which leads to a significant improvement in the fTxBVCEO product
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; Auger recombination; SiGe; SiGe spike; aggressive vertical scaling; base current; breakdown voltage; heterojunction bipolar transistor; high-speed HBT; mono-emitter; poly-emitter; semiconductor device breakdown; Bandwidth; Continuous improvement; Cutoff frequency; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Radiative recombination; Radio frequency; Semiconductor device breakdown; Silicon germanium; Auger recombination; base current; heterojunction bipolar transistor (HBT); mono-emitter; poly-emitter; semiconductor device breakdown; silicon–germanium (SiGe);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.892366
