Title :
A Graphene Field-Effect Device
Author :
Lemme, Max C. ; Echtermeyer, Tim J. ; Baus, Matthias ; Kurz, Heinrich
Author_Institution :
Adv. Microelectron. Center Aachen
fDate :
4/1/2007 12:00:00 AM
Abstract :
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs
Keywords :
MIS structures; MOSFET; carbon; carrier mobility; MOSFET; carrier mobilities; graphene field-effect device; graphene pseudoMOS structures; monolayer graphene; top-down CMOS-compatible process flow; top-gated field-effect device; Atomic layer deposition; CMOS technology; Carbon nanotubes; MOSFETs; Manufacturing; Microelectronics; Silicon on insulator technology; Substrates; Technological innovation; Thumb; Field effect; MOSFET; graphene; mobility; transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891668
