Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

Author

Ofuji, Masato ; Abe, Katsumi ; Shimizu, Hisae ; Kaji, Nobuyuki ; Hayashi, Ryo ; Sano, Masafumi ; Kumomi, Hideya ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Author_Institution

Canon Res. Center, Canon, Inc, Tokyo

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

273

Lastpage

275

Abstract

Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mus/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs

Keywords

amorphous semiconductors; indium compounds; sputtering; thin film circuits; thin film transistors; 10 micron; 18 V; 410 kHz; InGaZnO; RF magnetron sputtering; amorphous channel thin-film transistors; amorphous oxide semiconductor; fast thin-film transistor circuits; glass substrate; ring oscillators; unheated substrate; Amorphous magnetic materials; Amorphous materials; Circuits; Glass; Magnetic semiconductors; Radio frequency; Ring oscillators; Substrates; Thin film transistors; Zinc; Amorphous semiconductors; oxide semiconductors; ring oscillators (ROs); sputtering; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.893223

Filename

4137647