Title :
Wide Vfb and Vth Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics
Author :
Wang, X.P. ; Yu, H.Y. ; Li, M.-F. ; Zhu, C.X. ; Biesemans, S. ; Chin, Albert ; Sun, Y.Y. ; Feng, Y.P. ; Lim, Andy ; Yeo, Yee-Chia ; Loh, Wei Yip ; Lo, G.Q. ; Kwong, Dim-Lee
fDate :
4/1/2007 12:00:00 AM
Abstract :
For the first time, we demonstrate experimentally that by using HfLaO high-kappa gate dielectric, the flat-band voltage (Vfb) and the threshold voltage (Vth) of metal-electrode-gated MOS devices can be tuned effectively in a wide range (wider than that from the Si-conduction band edge to the Si-valence band edge) after a 1000-degC annealing required by a conventional CMOS source/drain activation process. As prototype examples shown in this letter, TaN gate with effective work function Phim,eff~3.9-4.2 eV and Pt gate with Phim,eff~5.5 eV are reported. A specific model based on the interfacial dipole between the metal gate and the HfLaO is proposed to interpret the results. This provides an additionally practical guideline for choosing the appropriate gate stacks and dielectric to meet the requirements of future CMOS devices
Keywords :
MIS devices; high-k dielectric thin films; 1000 C; CMOS source/drain activation process; Fermi-level pinning; HfLaO; flat-band voltage; high-K gate dielectric; interfacial dipole; metal-gated MOS devices; threshold voltage; work function; Annealing; CMOS process; CMOS technology; Dielectric devices; Hafnium compounds; Hafnium oxide; MOS devices; Microelectronics; Sun; Threshold voltage; CMOS; Fermi-level pinning; HfLaO; high- $kappa$ (HK) dielectric; interfacial dipole; metal gate (MG); work function;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.891757
