Effects of Measurement Temperature on NBTI

Author

Zhang, J.F. ; Chang, M.H. ; Groeseneken, G.

Author_Institution

Sch. of Eng., Liverpool John Moores Univ.

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

298

Lastpage

300

Abstract

Negative bias temperature instability (NBTI) is a pressing reliability issue for the CMOS industry. NBTI has been measured at stress temperature in most of the recent works. For the first time, this letter will demonstrate that, for a given number of defects, the threshold-voltage shift measured at stress temperature can be less than half of its value at room temperature. As a result, the data obtained at different measurement temperatures should not be used for extracting the thermal enhancement of defect creation. In the future, this newly identified dependence on measurement temperature should be taken into account when estimating the NBTI limited lifetime of pMOSFETs

Keywords

MOSFET; semiconductor device reliability; temperature; CMOS industry; NBTI; defect creation; gate dielectric; measurement temperature effect; negative bias temperature instability; reliability issue; stress temperature; thermal enhancement; Data mining; Negative bias temperature instability; Niobium compounds; Pressing; Stress measurement; Temperature dependence; Temperature measurement; Thermal stresses; Time measurement; Titanium compounds; Bias temperature instability (BTI); defects; degradation; gate dielectric; lifetime; negative BTI (NBTI); oxynitrides;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.893219

Filename

4137653