A charge control and current-voltage model for inverted MODFET´s

Author

Anwar, A.F.M. ; Liu, K.W. ; Khondker, A.N.

Author_Institution

Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

586

Lastpage

590

Abstract

An analytical model is used to investigate properties of the two-dimensional electron gas (2DEG) confined in a GaAs/AlGaAs quantum well (QW) formed in a inverted modulation doped field effect transistor (MODFET). The position of the Fermi level and the average distance of the carriers in the well have been calculated as a function of the 2DEG concentration, n_s. A charge control model is presented based on the self-consistent solution of Schrodinger and Poisson´s equation. The results show a unique behavior of the average distance of the 2DEG which increases with n_s, a property unique to these type of structures. The analysis is extended to model current-voltage characteristics

Keywords

Fermi level; III-V semiconductors; Schrodinger equation; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; two-dimensional electron gas; 2DEG concentration; Fermi level; GaAs-AlGaAs; GaAs/AlGaAs quantum well; Poisson equation; Schrodinger equation; analytical model; carrier distance; charge control model; conduction band profile; current-voltage characteristics; inverted MODFET; self-consistent solution; two-dimensional electron gas; Analytical models; Carrier confinement; Current-voltage characteristics; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Poisson equations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372058

Filename

372058