Title :
Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies
Author :
Schumacher, H. ; Erben, U. ; Gruhle, A.
Author_Institution :
Ulm Univ., Germany
fDate :
6/4/1992 12:00:00 AM
Abstract :
The microwave noise performance of Si/SiGe double-heterojunction bipolar transistors has been evaluated on-wafer, for frequencies ranging from 2 to 26 GHz. Noise figures of 0.6 dB at 2 GHz and 1.2 dB at 10 GHz were found to be among the lowest reported for bipolar transistors in general.
Keywords :
Ge-Si alloys; electron device noise; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; solid-state microwave devices; 0.6 dB; 1.2 dB; 2 to 26 GHz; Si-SiGe; double-heterojunction; elemental semiconductors; heterojunction bipolar transistors; microwave frequencies; microwave noise performance; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920736
