DocumentCode :
752045
Title :
The Gate-Controlled Diode, High-Frequency, and Quasi-Static C V Techniques for Character
Author :
Pan, James
Author_Institution :
Fairchild Semicond. Corp., West Jordan, UT
Volume :
56
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
1351
Lastpage :
1354
Abstract :
Gate-controlled diode (GCD), also called ldquoMOS-gated diode,rdquo is an effective and feasible technique to characterize the MOSFET critical parameters. However, the GCD current, from thermal generation, is often too low to be measurable with accuracy. We have successfully fabricated and characterized the GCD for an n-channel advanced vertical trenched power MOSFET. For a typical high-power MOSFET, the channel length is in the submicrometer range, and the transistor width is several ldquometersrdquo (packed into a tiny area). The GCD current can be detected with such extended transistor dimensions for a power MOSFET. The effects of epi doping concentration and thermal cycles are discussed. The high-frequency and quasi-static C -Vs measured from the power MOSFETs are analyzed and compared with the GCD data in this brief.
Keywords :
doping profiles; elemental semiconductors; power MOSFET; power transistors; semiconductor diodes; silicon; GCD current; Si; channel length; critical power transistor parameters; epi silicon doping concentration; gate-controlled diode; high-frequency current-voltage measurement; n-channel advanced vertical trenched power MOSFET; quasistatic current-voltage measurement; thermal cycles; Current measurement; Doping; Electrical resistance measurement; Implants; MOSFETs; P-n junctions; Semiconductor diodes; Silicon; Substrates; Transistors; $C$ $V$; gate-controlled diode (GCD); power MOSFET; quasi-static (QS);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2018161
Filename :
4840365
Link To Document :
بازگشت