DocumentCode :
752133
Title :
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 
m
Author :
Bachmann, Alexander ; Kashani-Shirazi, Kaveh ; Arafin, Shamsul ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching
Volume :
15
Issue :
3
fYear :
2009
Firstpage :
933
Lastpage :
940
Abstract :
In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p+-GaSb/n+-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75degC has been achieved at a wavelength of 2.3 mum. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; gas sensors; laser beams; laser tuning; semiconductor lasers; surface emitting lasers; GaInAsSb-AlGaAsSb; GaSb; VCSEL; buried tunnel junction; continuous-wave operation; distributed Bragg reflector; electrically-pumped vertical-cavity surface-emitting laser; gas-sensing applications; laser emission; laser tuning; mid-IR emission; single-mode operation; wavelength 2.3 mum; GaSb; semiconductor lasers; tunable diode laser absorption spectroscopy; vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2009.2013361
Filename :
4840372
Link To Document :
