A high power light triggered triac with a novel light sensitive structure

Author

Zhao, Shan-Qi ; Wang, Zheng-Yuan ; Gao, Ding-San

Author_Institution

Dept. of Electron. Eng., Jilin Univ., Changchun, China

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

773

Lastpage

779

Abstract

A high power light triggered triac with novel gate structure is presented, which consists of two thyristors connected in inverse parallel and one light emitting diode provided over a cone-shaped groove light sensitive gate between the thyristors. The light trigger characteristics have been studied, and some manufacturing techniques are also described. A 500-A, 1200-V, 40-mm diameter light triggered triac has been developed. This device has the characteristics of the minimum light triggering power of less than 15 mw, the on-state voltage of less than 1.6 V, the commutating dV/dt capability of 100 V/μs, and the commutating di/dt capability of 50 A/μs

Keywords

light emitting diodes; photoconducting switches; photothyristors; power semiconductor switches; 1.6 V; 1200 V; 15 mW; 40 mm; 500 A; commutating dV/dt capability; commutating di/dt capability; cone-shaped groove light sensitive gate; inverse parallel; light emitting diode; light sensitive structure; light trigger characteristics; light triggered triac; manufacturing techniques; minimum light triggering power; on-state voltage; thyristors; Circuits; Fabrication; Gallium arsenide; Light emitting diodes; Manufacturing; Semiconductor devices; Stimulated emission; Strips; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372083

Filename

372083