Title :
Broadband single- and double-balanced resistive HEMT monolithic mixers
Author :
Chen, T.H. ; Chang, K.W. ; Bui, S.B.T. ; Liu, L.C.T. ; Dow, G.S. ; Pak, S.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO balun, and two passive baluns for RF and IF. At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-13 GHz RF and 7.5-11 dB for 3-18 GHz RF. The SB mixer consists of a pair of AlGaAs/InGaAs HEMT´s, an active LO balun, a passive IF balun and a passive RF power divider. At 16 dBm LO power, this mixer achieves the conversion losses of 8-10 dB for 4-15 GHz RF and 8-11 dB for 2-16 GHz RF. The simulated conversion losses of both mixers are very much in agreement with the measured results. Also, the DB mixer achieves a third-order input intercept (IP3) of +19.5 to +27.5 dBm for a 7-18 GHz RF and 1 GHz IF at a LO drive of 16 dBm while the SB mixer achieves an input IP 3 of +20 to +28.5 dBm for 2 to 16 GHz RF and 1 GHz IF at a 16 dBm LO power. The bandwidth of the RF and LO frequencies are approximately 6:1 for the DB mixer and 8:1 for the SB mixer. The DB mixer of this work is believed to be the first reported DB resistive HEMT MMIC mixer covering such a broad bandwidth
Keywords :
HEMT circuits; III-V semiconductors; MMIC mixers; aluminium compounds; baluns; gallium arsenide; indium compounds; losses; 3 to 18 GHz; 7.5 to 11 dB; 8 to 11 dB; AlGaAs-InGaAs; AlGaAs/InGaAs HEMT quad; MMIC mixer; active LO balun; bandwidth; broadband mixers; conversion losses; double-balanced mixers; passive IF balun; passive RF balun; passive RF power divider; resistive HEMT monolithic mixers; simulation; single-balanced mixers; third-order input intercept; Bandwidth; Frequency conversion; Gallium arsenide; HEMTs; Impedance matching; MESFETs; Radio frequency; Schottky diodes; Switches; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on