Small-sized MMIC amplifiers using thin dielectric layers

Author

Banba, Seiichi ; Ogawa, Hiroyo

Author_Institution

ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan

Volume

43

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

485

Lastpage

492

Abstract

Miniaturized MMIC amplifiers utilizing a multilayer structure composed of thin film transmission lines are presented. The fundamental characteristics of the thin film transmission lines for use in microwave active circuits are discussed through calculations by numerical analysis. A two-stage low-noise amplifier, a single-stage wideband amplifier, and a balanced amplifier are designed within very small areas, while good performance is maintained. The results include that a Ka-band single-stage amplifier is fabricated in a 0.8 mm×0.6 mm area with a gain of 8.0-9.5 dB in the frequency range of 16-26.5 GHz and input/output return losses of better than 8 dB at 26.5 GHz. The proposed amplifier configurations can be applied to high density integration of one-chip MMIC modules

Keywords

HEMT integrated circuits; MMIC amplifiers; dielectric thin films; field effect MMIC; losses; microstrip lines; transmission line theory; wideband amplifiers; 16 to 26.5 GHz; 8 dB; 8 to 9.5 dB; Ka-band; SHF; balanced amplifier; low-noise amplifier; microwave active circuits; miniaturized MMIC amplifiers; multilayer structure; numerical analysis; single-stage wideband amplifier; thin dielectric layers; thin film transmission lines; two-stage LNA; Active circuits; Broadband amplifiers; Dielectric thin films; Distributed parameter circuits; Gain; Low-noise amplifiers; MMICs; Nonhomogeneous media; Numerical analysis; Thin film circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.372090

Filename

372090