• DocumentCode
    752521
  • Title

    Narrow Lorentzian linewidths in 980 nm strained-quantum-well lasers

  • Author

    Chinn, S.R. ; Alexander, S.B. ; Wang, Christine A. ; Evans, G.A.

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA, USA
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1175
  • Lastpage
    1176
  • Abstract
    Lorentzian frequency linewidths as narrow as 200 kHz have been measured in strained-layer InGaAs quantum-well Fabry-Perot ridge-waveguide lasers emitting at 980 nm. The contribution of 1/f frequency noise is evaluated by both spectral lineshape deconvolution and measurement of the frequency-noise spectrum.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1/f frequency noise; 980 nm; Fabry-Perot ridge-waveguide lasers; InGaAs; Lorentzian linewidths; frequency-noise spectrum; spectral lineshape deconvolution; strained-quantum-well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920741
  • Filename
    141187