Title :
Narrow Lorentzian linewidths in 980 nm strained-quantum-well lasers
Author :
Chinn, S.R. ; Alexander, S.B. ; Wang, Christine A. ; Evans, G.A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
Lorentzian frequency linewidths as narrow as 200 kHz have been measured in strained-layer InGaAs quantum-well Fabry-Perot ridge-waveguide lasers emitting at 980 nm. The contribution of 1/f frequency noise is evaluated by both spectral lineshape deconvolution and measurement of the frequency-noise spectrum.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1/f frequency noise; 980 nm; Fabry-Perot ridge-waveguide lasers; InGaAs; Lorentzian linewidths; frequency-noise spectrum; spectral lineshape deconvolution; strained-quantum-well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920741
