A model for proton-induced SEU

Author

Bion, T. ; Bourrieau, J.

Author_Institution

Centre d´´Etudes et de Recherches de Toulouse, France

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2281

Lastpage

2286

Abstract

The authors present a method for predicting proton-induced single-event upset (SEU) rates in devices exposed to given proton fluxes, within a particular spacecraft shielding. The approach uses experimental heavy-ion cross-section data, combined with nuclear reaction calculations, in order to determine the proton-induced SEU cross section versus proton energy relationship. Calculations for two devices, the Fairchild 93L422 RAM and the Intel 2164A dynamic RAM, for which heavy-ion test data were available, are presented and compared with other theoretical results and with ground-based experimental data. Available on-orbit SEU data are then compared with the present predictions. Predicted SEU rates for both protons and cosmic rays at various 60° circular orbits are also compared. Good agreement is found in all cases

Keywords

integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; 60° circular orbits; Fairchild 93L422 RAM; Intel 2164A dynamic RAM; cosmic rays; experimental heavy-ion cross-section data; heavy-ion test data; model; nuclear reaction calculations; on-orbit SEU data; proton energy; proton-induced SEU; spacecraft shielding; Aluminum; Circuits; Cosmic rays; Ionization; Low earth orbit satellites; Protons; Random access memory; Read-write memory; Single event upset; Space vehicles;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45436

Filename

45436