Title :
Monolithically integrated InGaAs-AlGaInAs Mach-Zehnder Interferometer optical switch using quantum-well intermixing
Author :
Wong, H.Y. ; Sorel, M. ; Bryce, A.C. ; Marsh, J.H. ; Arnold, J.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK
fDate :
4/1/2005 12:00:00 AM
Abstract :
A highly efficient monolithically integrated Mach-Zehnder interferometer (MZI) optical switch based on a 1.5-μm InGaAs-AlGaInAs multiple-quantum-well structure is reported. The device was fabricated by integrating phase shifter sections with bandgap-shifted low-loss waveguides obtained by a single step sputtered SiO2-annealing quantum-well intermixing technique. Evaluation of the refractive index change induced by current injection (plasma, band-filling, band-shrinkage effects) and applied electric field (quantum confined Stark effect) based on the MZI was investigated. A device with an active length of 400 μm in one of the MZI arms had an extinction ratio /spl ges/20 dB with a half-wavelength current (I/sub /spl pi//) and half-wavelength voltage V/sub /spl pi// as low as 3.2 mA and 3.5 V (1.9 V in push-pull configuration), respectively.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; annealing; electro-optical effects; electro-optical switches; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical losses; optical phase shifters; optical waveguides; quantum confined Stark effect; quantum well devices; refractive index; sputtering; 1.5 mum; 1.9 V; 3.2 mA; 3.5 V; 400 mum; InGaAs-AlGaInAs; InGaAs-AlGaInAs multiple-quantum-well; Mach-Zehnder interferometer; SiO/sub 2/; applied electric field; band-filling effect; band-shrinkage effect; bandgap-shifted waveguides; current injection; electrooptic effects; low-loss waveguides; monolithically integrated; optical switch; phase shifter section integration; plasma effect; quantum confined Stark effect; quantum-well intermixing; refractive index change; single step sputtered SiO/sub 2/-annealing; Optical switches; Optical waveguides; Phase shifters; Plasma confinement; Plasma devices; Plasma waves; Potential well; Quantum well devices; Quantum wells; Refractive index; Electrooptic effects; InGaAs–AlGaInAs multiple quantum well (MQW); Mach–Zehnder interferometer (MZI); quantum-well intermixing (QWI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.843255
