Title :
In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes
Author :
Yu, C.L. ; Chen, C.H. ; Chang, S.J. ; Su, Y.K. ; Chen, S.C. ; Chang, P.C. ; Chen, P.C. ; Wu, M.H. ; Chen, H.C. ; Su, K.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2005 12:00:00 AM
Abstract :
InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.
Keywords :
III-V semiconductors; dark conductivity; indium compounds; metal-semiconductor-metal structures; photoconductivity; photodetectors; wide band gap semiconductors; 470 nm; 5 V; In0.37Ga0.63N; InGaN metal-semiconductor-metal photodetectors; photocurrent; photocurrent-to-dark-current contrast ratio; recessed electrodes; responsivity; Chemical vapor deposition; DVD; Detectors; Electrodes; Gallium nitride; Light emitting diodes; Photoconductivity; Photodetectors; Photonic band gap; Wavelength measurement; InGaN; metal–organic chemical vapor deposition; metal–semiconductor–metal photodetectors (MSM-PDs); recessed electrodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.843251
