Title :
TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices
Author :
Obrecht, Michael S. ; Elmasry, Mohamed I. ; Heasell, Edwin L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
4/1/1995 12:00:00 AM
Abstract :
A new software tool TRASIM (Two-Dimensional Transient Simulator) has been developed for arbitrary, planar semiconductor devices. A finite difference technique is employed with a modified, decoupled Gummel-like method. The memory requirements are reduced significantly compared to the conventionally used Newton-like methods. TRASIM exhibits a good stability and convergence rate, and user interaction with the computational process is significantly reduced. Low memory requirements and efficiency make the method attractive for the future 3-D applications. The software uses the drift-diffusion model, with up-to-date mobility and lifetime models. External RC-chains may be connected to device electrodes. Numerical examples are presented illustrating the advantages of the modified Gummel method over the Newton method, for transient simulation
Keywords :
convergence of numerical methods; digital simulation; electronic engineering computing; finite difference methods; iterative methods; semiconductor device models; simulation; transient analysis; 2D simulator; 3D applications; TRASIM; arbitrary planar semiconductor devices; convergence rate; drift-diffusion model; finite difference technique; lifetime model; memory requirements reduction; mobility model; modified decoupled Gummel-like method; software tool; stability; two-dimensional transient simulator; Application software; Computational modeling; Convergence; Electron mobility; Finite difference methods; Newton method; Nonlinear equations; Semiconductor devices; Software tools; Stability;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on