Title :
Charge collection and SEU sensitivity for Ga/As bipolar devices
Author :
Yaktieen, M.H. ; McNulty, P.J. ; Lynch, J.E. ; Roth, D.R. ; Salzman, J.F. ; Yuan, J.H.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
Charge collection was measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive-volume models for calculating SEU (single-event-upset) rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of 4.4-MeV on oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and path length through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE (molecular beam epitaxy) to MOCVD (metal-organic chemical vapor deposition) processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 μm
Keywords :
alpha-particle effects; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); 0.11 to 0.25 micron; 20 MeV; 4.4 MeV; GaAs; HBT; MBE; MOCVD; O ions; SEU sensitivity; alpha-particles; angle of incidence; base-emitter heterojunction; calculating SEU; charge collection; linear energy transfer; path length; standard sensitive-volume models; Charge measurement; Chemical vapor deposition; Current measurement; Energy exchange; Heterojunctions; MOCVD; Measurement standards; Molecular beam epitaxial growth; Switches; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
